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NTMSD2P102LR2
SCHOTTKY MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Forward Current (Note 5)
(Rated V R , T A = 100 ° C)
Peak Repetitive Forward Current
(Note 5) (Rated V R , Square Wave, 20 kHz, T A = 105 ° C)
Non?Repetitive Peak Surge Current (Note 5)
Symbol
V RRM
V R
I O
I FRM
I FSM
Value
20
1.0
2.0
20
Unit
V
A
A
A
(Surge Applied at Rated Load Conditions, Half?Wave, Single Phase, 60 Hz)
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted) (Note 6)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(V GS = 0 Vdc, I D = ?250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = ?16 Vdc, V GS = 0 Vdc, T J = 25 ° C)
(V DS = ?16 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Zero Gate Voltage Drain Current
(V GS = 0 Vdc, V DS = ?20 Vdc, T J = 25 ° C)
V (BR)DSS
I DSS
I DSS
?20
?
?
?
?
?
?12.7
?
?
?
?
?
?1.0
?25
?2.0
Vdc
mV/ ° C
m Adc
m Adc
Gate?Body Leakage Current
I GSS
nAdc
(V GS = ?10 Vdc, V DS = 0 Vdc)
Gate?Body Leakage Current
(V GS = +10 Vdc, V DS = 0 Vdc)
I GSS
?
?
?
?
?100
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = ?250 m Adc)
Temperature Coefficient (Negative)
V GS(th)
?0.5
?
?0.90
2.5
?1.5
?
Vdc
mV/ ° C
Static Drain?to?Source On?State Resistance
R DS(on)
W
(V GS = ?4.5 Vdc, I D = ?2.4 Adc)
(V GS = ?2.7 Vdc, I D = ?1.2 Adc)
(V GS = ?2.5 Vdc, I D = ?1.2 Adc)
Forward Transconductance
(V DS = ?10 Vdc, I D = ?1.2 Adc)
g FS
?
?
?
?
0.070
0.100
0.110
4.2
0.090
0.130
0.150
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
550
750
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = ?16 Vdc, V GS = 0 Vdc, f = 1.0 MHz)
C oss
C rss
?
?
200
100
300
175
5. Mounted onto a 2 ″ square FR?4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single sided), t ≤ 10 seconds.
6. Handling precautions to protect against electrostatic discharge is mandatory.
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